Engineering local strain for single-atom nuclear acoustic resonance in silicon

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots single-dopant devices. Here, we describe design nanoelectronic device, where single nuclear spin is coherently controlled via acoustic resonance (NAR) through local application dynamical strain. The drives transitions by modulating quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal–oxide–semiconductor processing optimize device layout to maximize NAR drive. predict Rabi frequencies order 200 Hz for 123Sb nucleus wide region device. Spin driven directly electric fields are suppressed center allowing observation pure NAR. Using field gradient-elastic tensors calculated density-functional theory, extend our predictions other high-spin group-V donors isoelectronic 73Ge atom.